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The dedicated single column FIB system incorporates a gallium sourced high accelerating voltage of 40kV allowing a high current density ion beam to realize rapid and precise specimen preparation for both transmission and scanning electron microscopy. The system also runs at very low accelerating voltage for minimizing Ga ion implantation and the removal of amorphous material. Both SEM and TEM stages are available, and a variety of holders including air protection, cryo cooling, 3D analysis holders are available. Holder compatibility with Hitachi SEMs and TEMs realizes QTAT and ease of use.
Nothing is worse than loosing a nicely prepared TEM sample by some accident during a manual transfered from the FIB sample holder to another one fitting into the target SEM or (S)TEM.
With the FB2200, this problem does not exist.
Hitachi offers compatible sample holders which can be inserted in both, the FIB and the SEM/(S)TEM unit. Once the specimen has been mounted on the compatible holder by Hitachi's patented in-situ microsampling system, besides a safe, quick transfer from the FIB to the analysis tool, this concept also allows an easy re-work of pre-prepared specimen if this should be required.
Holder compatibility exists between FB-2200 and the following models:
|Accelerating Voltage||10 - 40 kV
2 and 5 kV optionally available
|Maximum beam current
(high beam current optional)
|60nA at 40 kV|
|Maximum beam current density||50A/cm2 at 40 kV|
|SIM image resolution||6 nm or better at 40 kV|
|Micro Sampling System for in-situ
TEM lamella extraction
|Deposition systems||W, C dual system|
|Auto-fabrication software||incl. milling position correction|
|Eucentric Auto-Stage (2 types) for larger specimen||Allows sample holder compatibility to SEM|
|Side Entry Stage (3 types)||Allows sample holder compatibility to TEM, HD, S-5500|
The FB-2200 allows for rapid and precise specimen preparation for both transmission and scanning electron microscopy of semiconductors and other advanced materials.