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Hitachi

Hitachi High-Technologies in Canada

Field Emission Transmission Electron Microscope HF-3300

The HF-3300 is a 100-300 kV TEM/STEM/SEM powered by Hitachi's state-of-the-art cold field emission technology for high-brightness and high-energy resolution. Capabilities needed for daily material structural characterizations and analysis are provided. Unique electron optical designs include spatially resolved EELS* and double biprism* electron holography (special order). The simultaneous secondary electron imaging and STEM imaging reveal surface and bulk structures at the same time. A special version for gas environmental TEM or aberration-corrected microscopy is available.

Features

High-brightness Cold Field Emission (Cold FE) electron source

Cold field emission electron source benefits nanoscale analysis with its high brightness and high-energy resolution. Its inherent high coherency greatly contributes to ultra-high resolution imaging and electron holography.*

300 kV accelerating voltage

A 300 kV accelerating voltage allows atomic-resolution imaging for thick specimens. Metals and ceramics with high atomic numbers are less electron transparent and often need to be observed at a 300 kV accelerating voltage.

Unique analytical capabilities

The newly introduced spatially resolved EELS* and the in-situ SEM/TEM imaging* nanobeam electron diffraction provide sophisticated and unique analytical capabilities.

Holder linkage with the FIB system*

The Hitachi-FIB-compatible specimen holder* requires no tweezer handling of TEM grids between FIB fabrication and TEM observation and ensures high-throughput TEM analysis. Hitachi's unique specimen rotation holder* enables real-time multidirectional structural analysis together with an STEM unit.*

User-friendly operation

Windows-based TEM/STEM* computer control, a motor-driven movable aperture, and a 5-axis motorized stage make the high-end TEM more accessible. It only takes 10 minutes to be high-voltage-ready and 1 minute for specimen exchange, providing high sample throughput for TEM analysis.

*:
Optional accessory

Specifications

ItemsDescription
Electron source W(310) cold field emission electron source
Accelerating voltage 300 kV, 200 kV*2, 100 kV*2
ResolutionLattice 0.10 nm
Point-to-point 0.19 nm
Information limit 0.13 nm
MagnificationLow Mag mode 200 - 500×
High Mag mode 2,000 - 1,500,000×
Image rotation ±5° or less (High Mag mode, below 1,000,000×)
Specimen tilt ±15°
Camera length 300 - 3,000 mm
*1
Specification at 300kV
*2
Optional accessory

Application Data

Materials Science

Au single crystal [110] high resolution TEM image

Au single crystal [110] high resolution TEM image
Accelerating voltage : 300 kV

MWCNT high resolution TEM image

MWCNT high resolution TEM image
Accelerating voltage : 100 kV

Graphene high resolution TEM image

Graphene high resolution TEM image
Accelerating voltage : 60 kV

Pt/C catalyst in situ gas-injecting SEM & STEM observation

Pt/C catalyst in situ gas-injecting SEM & STEM observation
Temperature : 200°C
Gas: H2, O2

Gas atmosphere EELS spectrum acquisition

Gas atmosphere EELS spectrum acquisition
Accelerating voltage : 300 kV
Gas : H2, O2, Air

Crocidolite (asbestos) fiber HR Lorentz TEM image

Crocidolite (asbestos) fiber HR Lorentz TEM image
Accelerating voltage : 300 kV
Instrument : HF-3300S WG-P.P. with B-COR TEM corr.
Data courtesy of CEMES-CNRS, France

Fe nanocube HR Lorentz phase reconstructed image

Fe nanocube HR Lorentz phase reconstructed image
Accelerating voltage : 300 kV
Instrument : HF-3300S WG-P.P. with B-COR TEM corr.
Data courtesy of CEMES-CNRS, France

Semiconductors

Cross sectional TEM image of 22 nm node FinFET

Gas atmosphere EELS spectrum acquisition
Accelerating voltage : 300 kV
Prepared by NX2000 1 kV Ar ion milling