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Electron Beam Absorbed Current (EBAC) Characterization System nanoEBAC NE4000

The Hitachi NE4000 nanoEBAC is an electron beam based probing system for electrical characterization and EBAC analysis and imaging of microelectronic device interconnects, materials, and components.

Overview

Electron Beam Absorbed Current (EBAC) technique offers a quick and effective method to identify open circuits, high resistance and shorts along interconnects without direct probing techniques of lower level layers.
The EBAC technique is performed with the electron beam by passing through the dielectric layers down to the lower level metallization layer in order to absorb the electron beam current. The electron beam accelerating voltage of the FESEM controls the probing depth or penetration level through the dielectric layers. A single probe is placed on the exposed, upper layer metallization to complete the circuit and allow the electrons to flow through the interconnect.
Observation of high resistance and shorts due to Seebeck effect is possible by using dual probes along with the Hitachi patented differential EBAC amplifiers.

User-Friendly Design

  • Intuitive GUI(Graphical User Interface) with various image and color processing functions.
  • Coarse positioning of probes are accomplished by an integrated in-chamber CCD camera system.

Premium Image Quality

  • Provides high quality EBAC images with Hitachi's patented high performance EBAC amplifiers.

Outstanding Performance

  • Field Proven, low chromatic aberration, Cold Field Emission (CFE) electron gun for low accelerating voltage imaging and beam damage reduction of the circuit.
  • High precision nano-probe units.

Advanced Applications

  • Dedicated nano-probing system with EBAC analysis and electrical characteristics analysis. Large specimen stage can provide fine material and electronics components evaluation.

Specifications

Hitachi Electron Beam Absorbed Current(EBAC) Characterization System nanoEBAC NE4000

Probe unit
Unit number 4
Driving method Piezoelectric
Fine stroke range 5 µm (X,Y)
Coarse stroke range 6 mm (X,Y)
Specimen stage / Base stage
Specimen size 25 mm × 25 mm × 1 mm thick or less
Traverse position Measurement / Specimen exchange position
Specimen exchange Air-locked exchange chamber
Prober navigation Stage traverse to probe position
Measurement position memory
Probe coarse adjustment
CCD image display Image display from lateral direction
Electron optics
Electron gun Cold field emission electron source
Accelerating voltage 0.5 kV to 30 kV
Resolution 15 nm (at 2 kV, WD=15 mm)
Image shift ±150 µm (at 2 kV, WD=15 mm)
EBAC amplifier / Image display
Amplifier type Current amplifier / Differential amplifier
Image display SEM / EBAC (Single / Parallel / Overlay)
Image processing Black and white reversal display, color display, brightness adjustment, slow scan integration, belt scan

Dimensions and Weight

Main unit 1,100 (W) × 1,550 (D) × 1,750 (H) mm,
850 kg
Display unit 1,000 (W) × 1,005 (D) × 1,200 (H) mm,
265 kg

Utility requirement

Room temperature 15 - 25 °C
Humidity 60% RH or less
Power AC100 V±10% 5 kVA (M5 crimp terminal)
Grounding 100Ω or less

Features

User-Friendly Design

Flexible GUI system for optimization and fine control
Flexible GUI system for optimization and fine control

Z axis CCD image for probe and specimen height optimization
Z axis CCD image for probe and specimen height optimization

Premium Image Quality

EBAC image of LSI’s net using Hitachi’s original EBAC amplifier
(courtesy of Renesas electronics corporation)

Outstanding Performance

High quality and high resolution imaging with refined nano-probe precision

 

Application Data

Technical magazine
"SI NEWS"

This journal addresses a wide range variety of research papers and useful application data using Hitachi science instruments.

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