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Hitachi

Hitachi High-Technologies GLOBAL

The transition thermal resistance measuring instrument is a device for measuring the transition thermal resistance of IGBT / MOS-FET / Diod / BJT.

(left picture) Photo of transition thermal resistance measuring instrument Model 2085

Special Features

  1. BJT (Bipolar Junction Transistor) transition thermal resistance measuring instrument
    The equipment measures thermal resistance by determining the difference in voltage. This is done by passing a small current between the base emitter of the transistor, then measuring the base-emitter voltage at that time, then applying power across the collector-emitter, increasing the junction temperature, and after cutting off the power, a small current is again passed through between the base emitters, and the difference in the voltage is determined.
  2. IGBT (Insulated Gate Bipolar Transistor) transition thermal resistance measuring instrument
    This is a measuring equipment that determines the difference in voltage between the gate and the emitter at the same time as the BJT transition thermal resistance measuring instrument .
  3. P-MOS FET transition thermal resistance measuring instrument
    This is a measuring equipment that determines the difference in voltage between the gate and the source at the same time as the BJT transition thermal resistance measuring instrument.
  4. The ΔVF of the diode can be measured.

Main specifications of the equipment

Model No.2082B208320852086
Measurement conditions VCB 2~199V
IE 0.1~29.9A
IM 1~99mA
Accuracy ±1%
PW
1,2,5,10mS
20,50,100, 200mS
500, 1000mS
VCB 2~599V
IE 0.1~249.9A
IM 1~199mA
Accuracy ±1%
PW
100,200, 500µS
1,2,5,10, 50mS
100,200, 500mS
1,2S
VCB 2~599V
IE 0.1~500.0A
IM 1~199mA
Accuracy ±1%
PW
100,200, 500µS
1,2,5,10, 50mS
100,200, 500mS
1,2S
VCB 2~99V
IE 0.1~99.9A
IM 1~199mA
Accuracy ±1%
PW
100,200, 500µS
1,2,5,10, 50mS
100,200, 500mS
1,2,5S,DC
Measuring range ΔVBE
1~999mV
VBE (max) 3V
ΔVGS
10mV~9.99V
VGS (max) 20V
ΔVBE
1~1999mV
VBE (max) 3V
Accuracy ±1%
ΔVBE
1~1999mV
VBE (max) 3V
Accuracy ±1%
ΔVBE
1~999mV
VBE (max) 3V
Accuracy ±1%
Sampling points Td 50~990µS Td 50~990µS Td 50~990µS Td 50~990µS
Maximum bias conditions ・At time PW 1mS
VCB 199V
IE 29.9A
・At time PW 1S
VCB 20V
IE 20.0A
・At time 100µS
VCB 599V
IE 250A
・At time PW 2S
VCB 20V
IE 50A
・At time 100µS
VCB 599V
IE 500A
・At time PW 2S
VCB 20V
IE 100A
・At time 100µS
VCB 99V
IE 99.9A
・At time DC
VCB 10V
IE 50A
Polarity of the sample Nch/Pch
NPN/PNP
NPN NPN NPN
Power source AC100V
±10%
50/60Hz 1Φ
AC100V
±10%
50/60Hz 1Φ
AC100V
±10%
50/60Hz 1Φ
AC200V
±10%
50/60Hz 1Φ
Outside dimensions[mm] W670
D750
H1400
W820
D1350
H1700
W820
D1350
H1700
W670
D750
H1400
Model No.208721852186
Measurement conditions VCB 2~1200V
IE 0.1~999.9A
IM 1~999mA
Accuracy ±1%
PW
0.1~99.9mS
1~999mS
0.01~9.99S
0.1~99.9S
1~999S
VCE 5~99V
IE 1~399A
IM 1~99mA
Accuracy ±1%
PW
1,2,5, 10mS
20,50, 100,mS
200,500mS
1,2,5,10S
VCE 10~1200V
IE 0.1~99.9A
IM 1~99mA
Accuracy ±1%
PW
100,200, 500µS
1,2,5,10, 50mS
100,200, 500mS
1,2S
Measuring range ΔVBE
1~999mV
VBE (max) 3V
Accuracy ±1%
ΔVGE
5~1999mV
VGE (max) 20V
Accuracy ±1%
ΔVGE
10~999mV
VGE (max) 20V
Accuracy ±1%
Sampling points Td 50~990µS Td 50~990µS Td 50~990µS
Maximum bias conditions ・At time 100µS
VCB 1200V
IE 1000A
・At time PW 2S
VCB 20V
IE 200A
・At time PW 1mS
VCE 99V
IE 399A
・At time PW 2S
VCE 20V
IE 100A
・At time 100µS
VCE 1200V
IE 99.9A
・At time PW 2S
VCE 20V
IE 50A
Polarity of the sample NPN Nch
NPN
Nch
NPN
Power source AC100V
±10%
50/60Hz 1Φ
AC200V
±5%
50/60Hz 1Φ
AC200V
±5%
50/60Hz 1Φ
Outside dimensions[mm] W1600
D2000
H1600
W1520
D2100
H1750
W800
D1600
H2000

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