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Hitachi

Hitachi High-Technologies GLOBAL

  • High Precise & Fine Patterning Technology for Al2O3 and AlN Substrate:
  • High Grade Al2O3 Substrate:
  • Excellent & Wide Range of Technology Portfolio:

Products & Technologies

  • Fine patterning technology at JFC enables low loss and low noise at high RF range.
  • Al2O3 substrate of JFC performs high mechanical strength and low dielectric loss tangent.
  • Optimize performance with Thinner substrate for high RF applications.


AlN and Al2O3 Substrate


High Grade Al2O3 Substrate


Air Bridge

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ItemUnitAl2O3
(99.9%)
Al2O3
(99.5%)
AINSi3N4
Bulk Density g/cm3 3.9 3.9 3.3 3.3
Flexural Strength Mpa 660 440 330 700
Coecient Liner Thermal Expansion 1/K 8×10-6 8×10-6 4.6×10-6 3×10-6
Thermal Conductivity W/m・K 33 32 170/200/230 100
Young's Modulus Gpa 390 380
Poisson's Ratio 0.25 0.25 0.29
Dielectric Constant 1MHz 8.8 7.56
10MHz 10 9.8
Dielectric Loss angle (25℃) 1MHz 5.0×10-4 2.2×10-3
10MHz 1×10-4 1×10-4
Volume Resistivity [Ω・cm] Ω・cm 1015 1015 1012 1013
Surface Roughness (Ra) [µm] µm 0.03 0.1


MIM Capacitor


Side Patterning


Via Hole & Registo