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© Takeo Kamino, Toshie Yaguchi, Kenichi Ishigami (Hitachi Instrument Engineering Co.,Ltd.)
Mixed powder of graphite and Si is heated up to 1,500degree Celsius and grown into a crystal of SiC through chemical reaction. A photograph shows us an example of the reaction. Here are transmitted images photographed at 1,500degree Celsius (left is before and right is after the reaction). The SiC (006) layer (d = 0.252 nm) is growing up on a graphite (002) layer (d = 0.335 nm).
At 49th photo contest hosted by the Japanese Society of Electron Microscopy in 1993.