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SiC crystals made in electron microscope

© Takeo Kamino, Toshie Yaguchi, Kenichi Ishigami (Hitachi Instrument Engineering Co.,Ltd.)

Mixed powder of graphite and Si is heated up to 1,500degree Celsius and grown into a crystal of SiC through chemical reaction. A photograph shows us an example of the reaction. Here are transmitted images photographed at 1,500degree Celsius (left is before and right is after the reaction). The SiC (006) layer (d = 0.252 nm) is growing up on a graphite (002) layer (d = 0.335 nm).

At 49th photo contest hosted by the Japanese Society of Electron Microscopy in 1993.

Condition

  • Specimen: Mixed powder of graphite and Si
  • Instrument: Transmission Electron Microscope H-9000NAR
  • Magnification : × 300,000
  • Accelerating voltage : 300 kV
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All information related to these photographers is based on the information when the photo was taken.
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This work was presented at the "photo contest" hosted by the Japanese Society of Microscopy.
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Reproduction or republication without permission prohibited.
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"nanoart" is registered trademark of Hitachi High-Technologies Corporation in Japan.