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© Toshie Yaguchi, Tadamasa Tsuruta, Takeo Kamino (Hitachi Instrument Engineering Co.,Ltd.)
© Takuji Miyamoto (Instrument Division, Hitachi, Ltd.)

We blew nitrogen gas (N2) against a silicon single-crystal melted in the specimen standby exhauster of the general analysis TEM, solidifying it in an instance. This photo shows the resulting crystal against a dark background. The crystal is still single-crystal in spite of the deformation.

At 51st photo contest hosted by the Japanese Society of Electron Microscopy in 1995.

Condition

  • Specimen : Si single crystal
  • Instrument : Transmission Electron Microscope H-9000NAR
  • Magnification : × 15,000
  • Accelerating voltage : 300 kV
  • Processing Condition
  • Heater temperature : 1,450°C
  • Gas pressure : 1.5 ~ 105 Pa
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All information related to these photographers is based on the information when the photo was taken.
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This work was presented at the "photo contest" hosted by the Japanese Society of Microscopy.
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Reproduction or republication without permission prohibited.
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"nanoart" is registered trademark of Hitachi High-Technologies Corporation in Japan.