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Hitachi

Hitachi High-Technologies Science America, Inc.

Vortex®-ME3 X-ray Detector

General Description

General Description - Vortex®-ME3

Vortex®-ME3 is a three-element silicon drift detector (SDD) X-ray detection system with a total active area of 90 mm² - 150 mm².
The Vortex®-ME3 offers superior energy resolution and high throughput performance to enhance the total analytical performance of the X-ray spectrometry system.

The Vortex®-ME3 is a special focal design, for maximizing solid angle, and with a narrow rectangular snout, to allow insertion and operation in a chamber with limited space. The focal distance can be designed per the customer’s request.

Typical Applications

  • X-ray fluorescence (XRF) spectroscopy both bulk and micro-fluorescence
  • Synchrotron radiation applications
  • Process control
  • Fast X-ray mapping
  • TEM and SEM applications where a horizontal geometry is applied

The Vortex®-ME3 is operated at near room temperature and cooled by a thermoelectric cooler (TEC) and can be cycled as frequently as needed without any degradation in detector performance. Cool down times are typically less than 3 minutes.

The Vortex®-ME3 X-ray spectroscopy systems include a detector unit and control box which includes power supplies for the detector, TEC and an optional digital pulse processor.

The complete detector also contains charge-sensitive preamplifiers and temperature stabilization system, which eliminates concerns of varying ambient temperature.

Features

  • Extended probe (300 mm - 600 mm)
  • Available in SDD thickness of 0.5 and 1 mm
  • Large area, three-element silicon drift detector (90 mm² - 150 mm²)
  • Excellent energy resolution
  • Three SDDs in a focal design; vertical or horizontal configuration
  • Detector temperature stabilization
  • Additional sizes are available under special arrangements
  • Small and compact package helps minimize vibration
  • Xmap or Mercury 4 - multi element processor
  • Equipped with an ion pump

Specifications

Specifications
Name Silicon Drift X-Ray Detector
Type Vortex®-ME3
Overview Vortex®-ME3 is a three-element, focal design, silicon drift detector (SDD) X-ray detection system feature active areas of up to 150 mm².
The Vortex®-ME3 offers superior energy resolution and high throughput performance to enhance the total analytical performance of the X-ray spectrometry system.
The Vortex®-ME3 is a special focal design, which maximizes solid angle, and features a narrow rectangular snout, to allow insertion and operation in a chamber with limited space. The focal distance can be designed per the customer's request.
The Vortex®-ME3 (Model number 1044-VTX-ME3-700) is composed of the following components, which are supplied as a package:
  • Power supply: Model number MMXIV-PS-11
  • Detector Cable
  • Power Cable
  • Xmap XIA or Mercury 4, four-channel digital pulse processor (optional)
Component Specifications Detector material: Silicon
Detector sensitive thickness: 0.5 mm and 1 mm
Detector total active area (for 3 SDDs) 90 mm² - 150 mm²
Window material: 12.5 µm thick Beryllium, or ATW (Moxtek MP3)
Preamplifiers 1 per SDD for a total of 3):
Type: Charge sensitive
Gain: 1.5 mV/keV +/-10%
Signal polarity: Positive
Reset: Electrical, synchronized for all channels, <1 µs duration
Cooling: Air cooling. Sufficient airflow needed. Do not obstruct cooling fan vent.
Spectrometer Performance (each channel) using the Xmap Energy resolution using 55Fe isotope:
FWHM (eV) at 5.9 keV
Peaking Time 1µs Typical <145 eV Maximum 155 eV,
Peaking Time 0.5 µs Typical < 150 eV Maximum 170 eV,
Peaking Time 0.25 µs Typical < 165 eV Maximum 185 eV,
Peaking Time 0.1 µs Typical < 220 eV Maximum 260 eV
Output count rate (OCR) of each channel at 50% dead time, with optimum pileup rejection performance, measured with X-ray tube excitation of a Mn sample:
Peaking Time 1 µs 0.5 µs 0.25 µs 0.1 µs
OCR (kcps) per Channel >130 >250 >400 >700 Mcps
Peak-to-background ratio (peak count at 5.9 keV divided by average counts between 1.6 keV and 3.2 keV background using 55Fe): >1000:1 at 1 µs peaking time where background measured as an average counts between 1.6 – 3.2 keV.
Counting efficiency stability for 8 hours using 55Fe isotope: <+/-0.5% rms
Counting efficiency stability with temperature (+5 to +30°C) using 55Fe: <200ppm/°C
Peak position stability with temperature (+5 to +30 °C) using 55Fe: <20eVat 200kcps ICR

Operating Environment

Operating Environment
Ambient Temperature +5 to +30 °C
Humidity 20 to 80% RH (no condensation)
Operating Position Horizontal, or tilted from 0 – 90° with the detector end pointing down
Physical Specifications Length × Height × Width: 900 mm × 325 mm x 125 mm
Weight: 4.3kg
Standard Cable length: 3 m
4-channel digital pulse processor (Xmap from XIA) Digitization: 14 bit, 50 MHz Gain: 16 bit, Gain DAC control Peaking Time: 0.1 – 100 µs Pileup rejection: Pulse pair resolution (PPR) better than 100ns ROIs: Up to 32 ROIs can be defined Timing: Multiple spectra, or ROIs can be stored with continuous operation using dual memory bank configuration. Integral non-linearity: <=0.1% over the full scale output range
Data output Spectrum size: 1024, 2048, 4096, 8192 Channel size: 10 eV
Software xManager (from XIA)
Power Requirement and Consumption Inlet line voltage (Inlet key selectable): 100V+15%, 115V+15%, 230V+20% single phase Detector power consumption: <40 W Xmap unit power consumption: <20 W

  • * 8 µm Be window available for a max SDD open area of 30 mm²
  • * 12.5 µm Be window available for a max SDD open area of 50 mm²
  • * 25 µm Be window available for a max SDD open area of 100 mm²
  • * 1mm thick SDD available for all SDD sizes, but final open area is smaller as a result of collimation