Skip to main content
The Hitachi NE4000 nanoEBAC is an electron beam based probing system for electrical characterization and EBAC analysis and imaging of microelectronic device interconnects, materials, and components.
Electron Beam Absorbed Current (EBAC) technique offers a quick and effective method to identify open circuits, high resistance and shorts along interconnects without direct probing techniques of lower level layers.
The EBAC technique is performed with the electron beam by passing through the dielectric layers down to the lower level metallization layer in order to absorb the electron beam current. The electron beam accelerating voltage of the FESEM controls the probing depth or penetration level through the dielectric layers. A single probe is placed on the exposed, upper layer metallization to complete the circuit and allow the electrons to flow through the interconnect.
Observation of high resistance and shorts due to Seebeck effect is possible by using dual probes along with the Hitachi patented differential EBAC amplifiers.
|Fine stroke range||5 µm (X,Y)|
|Coarse stroke range||6 mm (X,Y)|
|Specimen stage / Base stage|
|Specimen size||25 mm × 25 mm × 1 mm thick or less|
|Traverse position||Measurement / Specimen exchange position|
|Specimen exchange||Air-locked exchange chamber|
|Prober navigation||Stage traverse to probe position|
|Measurement position memory|
|Probe coarse adjustment|
|CCD image display||Image display from lateral direction|
|Electron gun||Cold field emission electron source|
|Accelerating voltage||0.5 kV to 30 kV|
|Resolution||15 nm (at 2 kV, WD=15 mm)|
|Image shift||±150 µm (at 2 kV, WD=15 mm)|
|EBAC amplifier / Image display|
|Amplifier type||Current amplifier / Differential amplifier|
|Image display||SEM / EBAC (Single / Parallel / Overlay)|
|Image processing||Black and white reversal display, color display, brightness adjustment, slow scan integration, belt scan|
|Main unit||1,100 (W) × 1,550 (D) × 1,750 (H) mm,
|Display unit||1,000 (W) × 1,005 (D) × 1,200 (H) mm,
|Room temperature||15 - 25 °C|
|Humidity||60% RH or less|
|Power||AC100 V±10% 5 kVA (M5 crimp terminal)|
|Grounding||100Ω or less|
Flexible GUI system for optimization and fine control
Z axis CCD image for probe and specimen height optimization
EBAC image of LSI’s net using Hitachi’s original EBAC amplifier
(courtesy of Renesas electronics corporation)
High quality and high resolution imaging with refined nano-probe precision
Designed NET layout of SoC
EBAC image at 7 kV
EBAC image at 13 kV
EBAC image at 18 kV
EBAC image at 20 kV
This journal addresses a wide range variety of research papers and useful application data using Hitachi science instruments.