Hitachi High-Tech's plasma chamber for conductor etch is based on an an ECR(Electron Cyclotron Resonance) plasma source, able to generate a stable high-density plasma at very low pressure (< 0.1 Pa).
Microwave ECR plasma provides a wide process window in both R & D and mass production through accurate plasma parameter management, such as plasma distribution or plasma position control.
The same plasma control technology is also applied to dry cleaning to maintain a more stable chamber condition.