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Hitachi

Hitachi High-Technologies in Korea

Electron Beam Absorbed Current (EBAC) Characterization System nanoEBAC NE4000

The Hitachi NE4000 nanoEBAC is an electron beam based probing system for electrical characterization and EBAC analysis and imaging of microelectronic device interconnects, materials, and components.

Features

  • Provides high quality EBAC images with Hitachi's patented high performance EBAC amplifiers.
  • Intuitive GUI(Graphical User Interface) with various image and color processing functions.
  • Field Proven, low chromatic aberration, Cold Field Emission (CFE) electron gun for low accelerating voltage imaging and reduced beam damage of the circuit.
  • High precision nano-probe units.
  • Coarse positioning of probes is accomplished by an integrated in-chamber CCD camera system.

EBAC technique offers a quick and effective method to identify interconnect opens, and high resistance and shorts without direct probing techniques of lower level layers.
EBAC utilizes the electron beam to pass through the dielectric layers allowing the lower level metallization layer to absorb the electron beam current. The electron beam accelerating voltage of the FESEM controls the probing depth of penetration through the dielectric layers. A single probe is placed on the exposed, upper layer metallization to complete the circuit and allow electron flow through the interconnect.
Observation of high resistance and shorts due to Seebeck effect is possible by using two probes and Hitachi patented differential EBAC amplifiers.

Application Data (Sample courtesy of Renesas Electronics Corporation)


EBAC image of a 4 layer Aluminum interconnect using the color display function
*Current amplifier image

Specifications

Hitachi Electron Beam Absorbed Current(EBAC) Characterization System nanoEBAC NE4000

Probe unit
Unit number 4
Driving method Piezoelectric
Fine stroke range 5 µm (X,Y)
Coarse stroke range 6 mm (X,Y)
Specimen stage / Base stage
Specimen size 25 mm × 25 mm × 1 mm thick or less
Traverse position Measurement / Specimen exchange position
Specimen exchange Air-locked exchange chamber
Prober navigation Stage traverse to probe position
Measurement position memory
Probe coarse adjustment
CCD image display Image display from lateral direction
Electron optics
Electron gun Cold field emission electron source
Accelerating voltage 0.5 kV to 30 kV
Resolution 15 nm (at 2 kV, WD=15 mm)
Image shift ±150 µm (at 2 kV, WD=15 mm)
EBAC amplifier / Image display
Amplifier type Current amplifier / Differential amplifier
Image display SEM / EBAC (Single / Parallel / Overlay)
Image processing Black and white reversal display, color display, brightness adjustment, slow scan integration, belt scan

Dimensions and Weight

Main unit 1,100 (W) × 1,550 (D) × 1,750 (H) mm,
850 kg
Display unit 1,000 (W) × 1,005 (D) × 1,200 (H) mm,
265 kg

Utility requirement

Room temperature 15 - 25 °C
Humidity 60% RH or less
Power AC100 V±10% 5 kVA (M5 crimp terminal)
Grounding 100Ω or less

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"SI NEWS"

This journal addresses a wide range variety of research papers and useful application data using Hitachi science instruments.

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