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Hitachi

Hitachi High-Tech in Korea

Ion Milling Processing System

  • Original Diffusion beam allows larger area processing with small diameter electrodes
  • Six φ100mm wafers can be processed at the same time

Diffusion Ion-Beam

Features

  • Newly developted diffusion ion-beam allows larger area processing with smaller diameter electrodes
  • Six φ100mm wafers can be processed at the same time by 6 stages
  • Good In-Plane uniformity is achieved by a rotary wafer chuck holder
 
Batch No.Etching Rate (SiO2)
(nm/min)
Uniformity(±%)
1 21.4 2.2
2 21.5 2.1
3 21.6 2.2

 

Small milling for R&D

Features

  • Stand-alone type of model speciallized for Research and Develope
  • Compact design that equipped electrical equipment and power supplies and etc.
  • Various sized wafers
    * Please consult with us about the size of work specification
  • Board cooling, board potential neutralization, borad rotating and stage tilting are functioned

 

Leaf-type

Features

  • Physical etching: Ar Beam allows processing regardless of material reactivity (e.g. PZT, LN, LT, NiFe, Au, composite materials, multilayer film, etc.)
  • Working temperature: Superior cooling mechanism suppresses material loss of piezoelectric characteristics, crystal structure changes, expansion and PR changes
  • Charge suppression: Unique neutralization mechanisms reduce material charge during processing
  • Selectivity: Stabel, highly uniform etching and end-pint detector allows [JUST Etching]
  • Processing shape: Beam incidence angle, beam divergence angle control function allows to adjust the taper angle
  • In-Plane distribution: excellent in-plane uniformity, in-plane and outer-surface rate are controlled
  • Equipment specifications: Diverse line-up of equipment, from small to large diameter and leaf to batch type, etc.

Examples of LT Board Trenching

 

Loadlock batch-type

Features

  • Physical etching: Ar Beam allows processing regardless of material reactivity (e.g. PZT, LN, LT, NiFe, Au, composite materials, multilayer film, etc.)
  • Working temperature: Superior cooling mechanism suppresses material loss of piezoelectric characteristics, crystal structure changes, expansion and PR changes
  • Charge suppression: Unique neutralization mechanisms reduce material charge during processing
  • Selectivity: Stabel, highly uniform etching and end-pint detector allows [JUST Etching]
  • Processing shape: Beam incidence angle, beam divergence angle control function allows to adjust the taper angle
  • In-Plane distribution: excellent in-plane uniformity, in-plane and outer-surface rate are controlled
  • Equipment specifications: Diverse line-up of equipment, from small to large diameter and leaf to batch type, etc.

Examples of LT Board Trenching