Nanoscale Device Characteristics Analysis System Nano-Prober NP6800
The Hitachi NP6800 is a SEM-based dedicated probing system designed to meet the analytical needs of the 10-nm design node semiconductor device and beyond.
The precision piezoelectric-driven actuator is equipped with X, Y and Z axes probe movements allowing the probes to be controlled very precisely for measuring the electrical characteristics of a single MOS transistor.
The design concept was to create an easy-to-use probing system (like an optical probing system) while maintaining this same ease of operation even under the vacuum environment through our intuitive probe operation design.
- This SEM-based probing system is used for analyzing defects and failures that can develop during the manufacturing process of any nanoscale semiconductor devices.
- The NP6800 Nano-Prober employs an optimized cold field-emission electron source, an eight-prober system, a temperature-controlled stage from -40 F to 302 F (-40 deg. to 150 deg.), an AC measurement system (optional) for gate-resistance detection, an EBAC system for short and open failure localization, and probe and specimen exchange units for the highest throughput.
- The NP6800 Nano-Prober was developed as a dedicated nano-probing system for not only high-throughput operation, but also the high-stability measurements of nano-scale semiconductor devices. The system is capable of evaluating electrical characteristics, EBAC, EBIC, pulse IV, and the temperature requirements of nanoscale devices.
This dedicated nano-probing system was co-developed with a number of semiconductor manufacturing companies for
- Improved probe stability and current for increased S/N and EBAC performance
- Increased electrical image shift to ±75 µm
- Eight-probe handling system
- Specimen-temperature controllable stage (-40°C to 150°C)
- CCD camera for both top-down and side views to assist with smoother probing
- A high-precision specimen stage for improved positioning accuracy
- An in-situ probe exchange system
- Electron Beam Absorbed Current (EBAC) function
- Voltage-applied EBAC function (Dynamic Induced EBAC "DI-EBAC") (Optional)
- Pulsed IV measurement for diagnosing resistive gate electrode defects (Optional)
Premium Image Quality
High-Resolution and High-Quality Imaging Performance
|Applicable device technology node||7 nm node device|
|Probe unit||Number of probe||8|
|Fine stroke range||5 µm (X,Y)|
|Coarse stroke range||3 mm (X), 5 mm (Y)|
|Specimen stage /|
|Specimen size||15 mm x 15 mm or smaller (1 mm thick or less)|
Measurement / Specimen exchange / Probe exchange
|Air-lock exchange chamber equipped|
|Probe navigation||Stage traverse to probe position
Measurement position memory
|Probe coarse adjustment|
|Probe coarse adjustment||CCD image display||
Top-down and side image displays
|Electron optics||Electron gun||
Cold field emission electron source
|Accelerating voltage||0.5 kV to 30 kV|
±75 µm (at Vacc=1.0 kV, WD=5 mm)
|EBAC amplifier /|
Current amplifier / Differential amplifier
|Image display||SEM / EBAC (Single / Parallel / Overlay)|
Black and white reversal display, color display, brightness adjustment, slow scan integration, belt scan
Dimensions and Weight
|Dimensions and Weight||1,190(W) × 1,377(D) × 1,800(H)(mm), 990 kg|
|Display Unit||1,000(W) × 1,004(D) × 1,200(H)(mm), 265 kg|
|EBAC unit||600(W) × 1,000(D) × 1,760(H)(mm), 150 kg|
|Humidity||60% RH or less|
|Power||AC100 V±10% 5 kVA (M5 crimp terminal)|
|Grounding||100Ω or less|
Electrical evaluation results of a 14nm SoC SRAM
Ids-Vgs characteristics of 14nm SoC SRAM
Static Noise Margin evaluation results of a 22 nm SoC SRAM
SEM image of SNM measurements with eight probes
SNM characteristics of a 22nm SoC SRAM
Temperature measurements taken with the heating and cooling stages from -40°C to 150°C.
Ids-Vgs characteristics of a 45nm SoC SRAM
Pulse IV measurement (Optional)
Output signal from a single transistor obtained after pulse input
EBAC analysis of a Cu Via-chain test pattern with high resistance
Voltage-applied EBAC (Dynamic Induced EBAC named DI-EBAC) analysis of MOS transistor with gate leakage
This journal addresses a wide range variety of research papers and useful application data using Hitachi science instruments.