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Hitachi

Hitachi High-Tech GLOBAL

Batch type ion beam etching machine

Features

  • Bucket type ion source of maximum Φ 580mm.
  • Both high uniformity and high throughput are possible.
  • Control of etching rates is possible high and low.
  • Wafer (substrate) self-revolving stage.
  • Corresponding to irregular-shaped substrates such as rectangular substrates and mixed irregular substrates, it is also possible to combine substrate sizes.

Main Applications

  • Fine processing for printer heads, etc.

Machine evaluation

  • We will provide sample processing tailored to the customer's application for free for the first time.
    Please make inquires our company regarding wafer size, number of wafer for processing, etc.


In Processing Room (Image diagram)

Specifications

TypeIM-580
Ion source size Φ580
Ion source voltage 300~1000V
Current density ~1mA/cm2
Object substrate φ4 " × 10
9 × 5 φinches
8 × 6 "
Holder movement Revolution/Inclination (*)
Holder cooling Water cooling / Gas cooling
Wafer replacement Manual

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