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Hitachi

Hitachi High-Tech GLOBAL

Ion beam etching machine

Applicable to etching of piezoelectric and magnetic materials for IoT and automotive devices from experiments to mass production.

Advanced diffused beam

Advanced diffused beam

Features

  • Newly developed diffusion beam enables to etch for large areas with small diameter electrodes.
  • 6 wafers(φ100mm) in a holder can be processed all together.
  • Excellent in-plane uniformity with self-revolving wafer holder.
Batch No.Etching Rate(SiO2)
(nm/min)
Uniformity(±%)
1 21.4 2.2
2 21.5 2.1
3 21.6 2.2

Small Ion beam etching machine for R&D

Small Ion beam etching machine for R&D

Features

  • A stand-alone machine specialized for experimental development.
  • Compact design in one unit with electric components and power supplies
  • Cooling the substrate, Neutralizing the electric potential of substrates , substrate rotation, stage tilting
  • Available up to φ 75, φ 100 and φ 125 mm wafers.
    * Please contact us regarding the special work figure.

Single Wafer Ion Beam Etching machine

Sheet-fed machine IML-8-1M

Features

  • Physical etching: Ar beam allows processing regardless of the reactivity of the material.
    (Example)PZT, LN, LT, NiFe, Au, composite materials, multilayer films, etc.)
  • Processing temperature: The enhanced cooling mechanism suppresses the loss of piezoelectric properties of materials, changes in crystal structure, expansion, and changes of photoresist.
  • Static charge control: The unique neutralization mechanism suppresses the charging of materials during processing.
  • Selectivity: Stable and highly uniform etching. Just etching by the end point detector is possible.
  • Processing shape: Adjust the taper angle by controlling the beam incident angle and beam divergence angle.
  • In-plane distribution: Enhanced in-plane uniformity and in-plane inner/outer peripheral rate control.
  • Machine specifications: A wide range of machine is available, from small diameter to large diameter.

(e.g): Trench etching for LT substrate
(e.g): Trench etching for LT substrate

Load Lock and Batch Ion Beam Etching machine

Sheet-fed Machine

Features

  • Physical etching: Ar beam allows processing regardless of the reactivity of the material.
    (Example)PZT, LN, LT, NiFe, Au, composite materials, multilayer films, etc.)
  • Processing temperature: The enhanced cooling mechanism suppresses the loss of piezoelectric properties of materials, changes in crystal structure, expansion, and changes of photoresist.
  • Static charge control: The unique neutralization mechanism suppresses the charging of materials during processing.
  • Selectivity: Stable and highly uniform etching. Just etching by the end point detector is possible.
  • Processing shape: Adjust the taper angle by controlling the beam incident angle and beam divergence angle.
  • In-plane distribution: Enhanced in-plane uniformity and in-plane inner/outer peripheral rate control.
  • Machine specifications: A wide range of machine is available, from small diameter to large diameter.

(e.g): Trench etching for LT substrate
(e.g): Trench etching for LT substrate

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