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Nanoscale Device Characteristics Analysis System Nano-Prober NP6800

Nanoscale Device Characteristics Analysis System Nano-Prober NP6800

The Hitachi NP6800 is a SEM-based dedicated probing system designed to meet the analytical needs of the 10-nm design node semiconductor device and beyond.
The precision piezoelectric-driven actuator is equipped with X, Y and Z axes probe movements allowing the probes to be controlled very precisely for measuring the electrical characteristics of a single MOS transistor.
The design concept was to create an easy-to-use probing system (like an optical probing system) while maintaining this same ease of operation even under the vacuum environment through our intuitive probe operation design.

    Overview

    • This SEM-based probing system is used for analyzing defects and failures that can develop during the manufacturing process of any nanoscale semiconductor devices.
    • The NP6800 Nano-Prober employs an optimized cold field-emission electron source, an eight-prober system, a temperature-controlled stage from -40 F to 302 F (-40 deg. to 150 deg.), an AC measurement system (optional) for gate-resistance detection, an EBAC system for short and open failure localization, and probe and specimen exchange units for the highest throughput.
    • The NP6800 Nano-Prober was developed as a dedicated nano-probing system for not only high-throughput operation, but also the high-stability measurements of nano-scale semiconductor devices. The system is capable of evaluating electrical characteristics, EBAC, EBIC, pulse IV, and the temperature requirements of nanoscale devices.

    14nm SRAM image Accelerating voltage: 0.5kV
    14nm SRAM image
    Accelerating voltage: 0.5kV

    Cross section image
    Cross section image

    Features

    This dedicated nano-probing system was co-developed with a number of semiconductor manufacturing companies for

    • Improved probe stability and current for increased S/N and EBAC performance
    • Increased electrical image shift to ±75 µm
    • Eight-probe handling system
    • Specimen-temperature controllable stage (-40°C to 150°C)
    • CCD camera for both top-down and side views to assist with smoother probing
    • A high-precision specimen stage for improved positioning accuracy
    • An in-situ probe exchange system
    • Electron Beam Absorbed Current (EBAC) function
    • Voltage-applied EBAC function (Dynamic Induced EBAC "DI-EBAC") (Optional)
    • Pulsed IV measurement for diagnosing resistive gate electrode defects (Optional)

    User-Friendly Interface

    Fully controllable GUI
    Fully controllable GUI

    User-Friendly Design

    Top-down CCD camera image for optimizing the position of probes to the specimen in the X and Y axes
    Top-down CCD camera image for optimizing the position of probes to the specimen in the X and Y axes

    Side-view CCD camera image for optimizing the position of probes to the specimen in the Z axis
    Side-view CCD camera image for optimizing the position of probes to the specimen in the Z axis

    Premium Image Quality

    EBAC image of a multi-layer circuit 
Accelerating voltage: 20kV
    EBAC image of a multi-layer circuit Accelerating voltage: 20kV

    High-Resolution and High-Quality Imaging Performance

    High-quality and high-resolution image for high-precision probe positioning
    High-quality and high-resolution image for high-precision probe positioning

    Specifications

    Applicable device technology node 7 nm node device
    Probe unitNumber of probe 8
    Driving method Piezoelectric
    Fine stroke range 5 µm (X,Y)
    Coarse stroke range 3 mm (X), 5 mm (Y)
    Specimen stage /
    Base stage
    Specimen size 15 mm x 15 mm or smaller (1 mm thick or less)
    Traverse position

    Measurement / Specimen exchange / Probe exchange

    Specimen /
    probe exchange

    Air-lock exchange chamber equipped
    Probe navigation Stage traverse to probe position
    Measurement position memory
    Probe coarse adjustment
    Probe coarse adjustmentCCD image display

    Top-down and side image displays

    Electron opticsElectron gun

    Cold field emission electron source

    Accelerating voltage 0.5 kV to 30 kV
    Image shift

    ±75 µm (at Vacc=1.0 kV, WD=5 mm)

    EBAC amplifier /
    Image display
    Amplifier type

    Current amplifier / Differential amplifier

    Image display SEM / EBAC (Single / Parallel / Overlay)
    Image processing

    Black and white reversal display, color display, brightness adjustment, slow scan integration, belt scan

    Dimensions and Weight

    Dimensions and Weight 1,190(W) × 1,377(D) × 1,800(H)(mm), 990 kg
    Display Unit 1,000(W) × 1,004(D) × 1,200(H)(mm), 265 kg
    EBAC unit 600(W) × 1,000(D) × 1,760(H)(mm), 150 kg

    Utility requirement

    Room temperature 15~25°C
    Humidity 60% RH or less
    Power AC100 V±10% 5 kVA (M5 crimp terminal)
    Grounding 100Ω or less

    Application Data

    Electrical evaluation results of a 14nm SoC SRAM

    Ids-Vgs characteristics of 14nm SoC SRAM
    Ids-Vgs characteristics of 14nm SoC SRAM

    Static Noise Margin evaluation results of a 22 nm SoC SRAM

    SEM image of SNM measurements with eight probes
    SEM image of SNM measurements with eight probes

    SNM characteristics of a 22nm SoC SRAM
    SNM characteristics of a 22nm SoC SRAM

    Temperature measurements taken with the heating and cooling stages from -40°C to 150°C.

    Ids-Vgs characteristics of a 45nm SoC SRAM
    Ids-Vgs characteristics of a 45nm SoC SRAM

    Pulse IV measurement (Optional)

    Output signal from a single transistor obtained after pulse input
    Output signal from a single transistor obtained after pulse input

    EBAC analysis of a Cu Via-chain test pattern with high resistance

    EBAC analysis of a Cu Via-chain test pattern with high resistance

    Voltage-applied EBAC (Dynamic Induced EBAC named DI-EBAC) analysis of MOS transistor with gate leakage

    Voltage-applied EBAC (Dynamic Induced EBAC named DI-EBAC) analysis of MOS transistor with gate leakage

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