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Focused Ion Beam System (FIB/FIB-SEM) Lineup
The Hitachi Ethos FIB-SEM incorporates the latest-generation FE-SEM with superb beam brightness and stability. Ethos delivers high-resolution imaging at low voltages combined with ion optics for nanoscale precision processing.
SEM column and FIB column are orthogonally arranged to optimize column layout for 3D structural analysis. FE electron source and its unique detection geometry enable high resolution SEM imaging at beam coincident point. 3D-EDS and 3D-EBSD can be performed without moving the stage. Employing micro-sampling and triple beam system, high quality samples can be prepared for TEM and atom probe.
NX2000 was developed towards the ultimate TEM sample preparation system. FE electron source and high-sensitivity detection system allow high-contrast, real-time end point detection. Sample orientation control technology and Ar/Xe triple beam system enable significant reduction of artefacts and damage during sample preparation. With auto micro-sampling function, the throughput of TEM sample preparation can be drastically improved.
MI4050 allows both high resolution SIM imaging and ultrafast FIB milling. High quality TEM sample can be readily prepared using Micro-sampling and low energy FIB. Cross-section FIB slicing and SIM imaging can be alternately repeated to automatically collect serial cross-sectional SIM images for subsequent 3D reconstruction.
NB5000 combines high resolution FE-SEM and ultrafast FIB in a single platform. Unique 40kV FIB works well for hard material processing and large area milling. Hitachi's proprietary Micro-sampling allows site-specific TEM sample preparation in a productive manner. Side entry stage enables the use of holders compatible with Hitachi TEM/STEM.
This device is used for preparing the desired wafer part for analysis with STEM, TEM, etc. by extracting a micro sample with an ion beam in the vacuum chamber of an FIB system.
The CAD Navigation System for Failure Analysis (NASFA) is used to identify the location on the CAD data corresponding to the LSI pattern being observed with a SEM or FIB system. When the coordinates on the CAD data are specified, the sample stage moves to the particular coordinates, displaying the corresponding SEM image (or SIM image for the FIB). The CAD data and SEM image can be overlaid and it is easy to verify the lower-layer wiring location, significantly improving the efficiency of analysis and repair work.
Applications of Focused Ion Beam Systems (FIB/FIB-SEM) are available on S.I.navi, Hitachi Membership Site.
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