Single wafer type ion beam etching machine
- Etching rate control is possible high and low
- Filamentless μ wave neutralizer (Options).
- EPD (end point detector) mounting (Options).
- Availabｌe on reactive gas (Options).
- Filamentless RF ion source of bucket type (Options)
- Microfabrication for MEMS devices, wiring and electrode processing of high-frequency filters and compound semiconductors, micropatterning / forming processing of magnetic sensors, etc.
We will provide sample processing tailored to the customer's application for free for the first time.
Please make inquires our company regarding wafer size, number of wafer for processing, etc.
|Ion source size||Φ200|
|Ion source voltage||300～1000V|
|Current density||~ 1 mA/cm2|
|Object substrate||1 × 5 "|
|Holder motion||Rotation and inclination|
|Holder cooling||Water cooling / Gas cooling|
Machine with two treatment rooms is also possible.