Conductor Etch Systems
Introducing the product lineup of conductor etch systems
Next generation devices at 20nm and below require double-patterning, 3D (three-dimensional) structures, and complex, high-precision processes that include protective layer formation and finishing techniques for new materials.
Conductor Etch System M-8000 Series is utilized for hard mask and silicon etching for 32nm and beyond. Hitachi High-Tech developed new process flows, such as double patterning and new material etch processes such as high-k dielectric/metal gate through JDP (Joint Development Program) with device makers and material / tool suppliers.
Low temperature etch technology and TM (Time Modulation) bias technology together with the ECR (Electron Cyclotron Resonance) high density plasma source provide for a clean process, superior trench profiles without sidewall residue, and excellent productivity.