Nanoscale Device Characteristics Analysis System Nano-Prober NP6800

The Hitachi NP6800 is a SEM-based dedicated probing system designed to meet the analytical needs of the 10-nm design node semiconductor device and beyond.
The precision piezoelectric-driven actuator is equipped with X, Y and Z axes probe movements allowing the probes to be controlled very precisely for measuring the electrical characteristics of a single MOS transistor.
The design concept was to create an easy-to-use probing system (like an optical probing system) while maintaining this same ease of operation even under the vacuum environment through our intuitive probe operation design.

Overview Features Specifications Application Data

Overview

This SEM-based probing system is used for analyzing defects and failures that can develop during the manufacturing process of any nanoscale semiconductor devices.
The NP6800 Nano-Prober employs an optimized cold field-emission electron source, an eight-prober system, a temperature-controlled stage from -40 F to 302 F (-40 deg. to 150 deg.), an AC measurement system (optional) for gate-resistance detection, an EBAC system for short and open failure localization, and probe and specimen exchange units for the highest throughput.
The NP6800 Nano-Prober was developed as a dedicated nano-probing system for not only high-throughput operation, but also the high-stability measurements of nano-scale semiconductor devices. The system is capable of evaluating electrical characteristics, EBAC, EBIC, pulse IV, and the temperature requirements of nanoscale devices.

14nm SRAM image Accelerating voltage: 0.5kV — 14nm SRAM image
Accelerating voltage: 0.5kV

Features

This dedicated nano-probing system was co-developed with a number of semiconductor manufacturing companies for

Improved probe stability and current for increased S/N and EBAC performance
Increased electrical image shift to ±75 µm
Eight-probe handling system
Specimen-temperature controllable stage (-40°C to 150°C)
CCD camera for both top-down and side views to assist with smoother probing
A high-precision specimen stage for improved positioning accuracy
An in-situ probe exchange system
Electron Beam Absorbed Current (EBAC) function
Voltage-applied EBAC function (Dynamic Induced EBAC "DI-EBAC") (Optional)
Pulsed IV measurement for diagnosing resistive gate electrode defects (Optional)

User-Friendly Interface

User-Friendly Design

Top-down CCD camera image for optimizing the position of probes to the specimen in the X and Y axes

Side-view CCD camera image for optimizing the position of probes to the specimen in the Z axis

Premium Image Quality

EBAC image of a multi-layer circuit Accelerating voltage: 20kV

High-Resolution and High-Quality Imaging Performance

High-quality and high-resolution image for high-precision probe positioning

Specifications

Applicable device technology node		7 nm node device
Probe unit	Number of probe	8
	Driving method	Piezoelectric
	Fine stroke range	5 µm (X,Y)
	Coarse stroke range	3 mm (X), 5 mm (Y)
Specimen stage / Base stage	Specimen size	15 mm x 15 mm or smaller (1 mm thick or less)
	Traverse position	Measurement / Specimen exchange / Probe exchange
	Specimen / probe exchange	Air-lock exchange chamber equipped
	Probe navigation	Stage traverse to probe position Measurement position memory
	Probe navigation	Probe coarse adjustment
Probe coarse adjustment	CCD image display	Top-down and side image displays
Electron optics	Electron gun	Cold field emission electron source
	Accelerating voltage	0.5 kV to 30 kV
	Image shift	±75 µm (at Vacc=1.0 kV, WD=5 mm)
EBAC amplifier / Image display	Amplifier type	Current amplifier / Differential amplifier
	Image display	SEM / EBAC (Single / Parallel / Overlay)
	Image processing	Black and white reversal display, color display, brightness adjustment, slow scan integration, belt scan

Dimensions and Weight

Dimensions and Weight	1,190(W) × 1,377(D) × 1,800(H)(mm), 990 kg
Display Unit	1,000(W) × 1,004(D) × 1,200(H)(mm), 265 kg
EBAC unit	600(W) × 1,000(D) × 1,760(H)(mm), 150 kg