Batch type ion beam etching machine
- Bucket type ion source of maximum Φ 580mm.
- Both high uniformity and high throughput are possible.
- Control of etching rates is possible high and low.
- Wafer (substrate) self-revolving stage.
- Corresponding to irregular-shaped substrates such as rectangular substrates and mixed irregular substrates, it is also possible to combine substrate sizes.
- Fine processing for printer heads, etc.
We will provide sample processing tailored to the customer's application for free for the first time.
Please make inquires our company regarding wafer size, number of wafer for processing, etc.
|Ion source size||Φ580|
|Ion source voltage||300～1000V|
|Object substrate||φ4 " × 10
9 × 5 φinches
8 × 6 "
|Holder movement||Revolution/Inclination (*)|
|Holder cooling||Water cooling / Gas cooling|