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Hitachi High-Tech in Thailand
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  5. Batch type ion beam etching machine

Batch type ion beam etching machine

Batch type ion beam etching machine

Features

  • Bucket type ion source of maximum Φ 580mm.
  • Both high uniformity and high throughput are possible.
  • Control of etching rates is possible high and low.
  • Wafer (substrate) self-revolving stage.
  • Corresponding to irregular-shaped substrates such as rectangular substrates and mixed irregular substrates, it is also possible to combine substrate sizes.

Main Applications

  • Fine processing for printer heads, etc.

Machine evaluation

  • We will provide sample processing tailored to the customer's application for free for the first time.
    Please make inquires our company regarding wafer size, number of wafer for processing, etc.
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In Processing Room (Image diagram)

Specifications

TypeIM-580
Ion source size Φ580
Ion source voltage 300~1000V
Current density ~1mA/cm2
Object substrate φ4 " × 10
9 × 5 φinches
8 × 6 "
Holder movement Revolution/Inclination (*)
Holder cooling Water cooling / Gas cooling
Wafer replacement Manual

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