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Hitachi High-Tech in Canada

Spherical Aberration Corrected STEM/SEM HD-2700

The HD-2700 is an 80-200 kV field-emission-gun scanning transmission electron microscope (STEM) with secondary electron (SE) imaging capability. Bulk and surface structures of a specimen can be imaged simultaneously. With the option for a probe-forming aberration corrector, ultra-high resolution can be achieved for both STEM and SE imaging. The Hitachi corrector minimizes the user's effort in doing aberration correction. Large solid-angle EDS* and atomic-spatial-resolution EDS* and EELS spectrum imaging* are enabled.


High-resolution STEM imaging

HAADF-STEM image 0.136 nm, FFT image 0.105 nm (HR lens*)
BF STEM image 0.204 nm (w/o Cs-corrector)

High-speed & high-sensitivity EDX analysis: Probe current × 10 times

Timely and rapid elemental mapping
Low-concentration element detection

Hitachi-developed Cs-corrector

Equipped with a probe-forming spherical aberration corrector developed by Hitachi, the automatic aberration-correction process takes a short time and does not require prior experience for aberration correction.

Seamless solution from sample preparation to observation & analysis

Holder compatible with Hitachi FIB

Optional accessory


w/o Cs-correctorw/ Cs-corrector
Image resolution 0.204 nm guaranteed (at a magnification of
0.136 nm guaranteed (HAADF-STEM image)
0.105 nm guaranteed (FFT)(at a magnification of
×7,000,000)(HR lens)
Magnification ×100 - ×10,000,000
Accelerating voltage 200 kV, 120 kV *, 80 kV*
Imaging signal Bright field STEM: Phase contrast image (TE image)
Dark field STEM: Z-contrast image (ZC image)
Secondary electron image (SE image)
Electron diffraction*
Characteristic X-ray analysis and mapping(EDX)*
EELS analysis and mapping(EV3000)*
Electron optics       Electron source Schottky emitter (w/o Cs-corrector)
Cold field emitter (w/Cs-Correcter,w/o Cs-corrector)
Illumination lens system 2-stage condenser lens
Cs-corrector* Mullipole transfer lens design
Scanning coil 2-stage electromagnetic coil
ZC collection angle control Projector lens design
Electromagnetic image shift ±1 µm
Specimen stage  Specimen movement X/Y = ±1 mm, Z= ±0.4 mm
Specimen tilt Single-tilt holder: ±30° (Std. lens), ±18° (HR lens)

Cs-corrected SEM imaging

The Hitachi HD-series dedicated STEM is equipped with a secondary electron (SE) detector as standard configuration; this enables imaging the specimen surface directly in addition to obtaining interior structural information of specimen via the transmitted electron beam. SE imaging offers fine dimension measurements of thicker samples not compatible with STEM.
Spherical aberration correction pushes the SEM resolution to an unprecedented, true atomic level.

LSI device cross-sectional SEM image
(Vacc.:200 kV, Specimen thickness: 1 µm)

The principle of SE detection

Large solid-angle EDS detector

A large solid-angle SDD (100 mm2) provides greatly enhanced EDS analytical sensitivity compared with previous models, as well as higher throughput of elemental analysis in a shorter data-acquisition time.

Semiconductor MOS transister EDS mapping Instrument: HD-2700B(non Cs-corrected), Acquisition time:10sec./frame, Playback speed:5×

Application Data


Cross Section BF-STEM Images of 32 nm NMOS Transistor

HD-2700 with aberration corrector
Acceleration Voltage : 200 kV

Dopant profile of 32 nm NMOS transistor

Instruments: HD-2700,
Accelerating Voltage: 200 kV,
Pixel Size : 128 x 100 pixels,
Acquisition time : 30 min.

Cross section SEM images

Materials Science

BF-STEM (a) and SD-STEM (b) image of austenitic stainless steel.

SD-STEM: Selected Diffraction STEM

SD-STEM image of austenitic stainless steel.

Atomic resolved EDX map SrTiO3

Atomic resolved EDX map GaAs