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Hitachi High-Technologies GLOBAL

Local resistance distribution on the sample surface at the wide range amplifier greater than 6th order is observed by using a hard cantilever of high conductivity and measuring the micro-current at the contact position with the probe by applying a bias voltage to the sample. The practical semiconductor dopant concentration range is sufficiently covered.

Mos transistor


Schematic Animation of SSRM Observation

Cathode materials for Li‐ion batteries

The electric resistance distribution of highly conductive Al foil and various cathode materials (micro‐cathode active materials, a conductive assistant, and resin binders) on both sides are clearly observed in the SSRM image.

  • Electron Microscopes (SEM/TEM/STEM)
  • Atomic Force Microscopes (AFM)
    • Description
      • Dynamic Force Microscope (DFM)
      • Scanning Tunneling Microscope (STM)
      • Sampling Intelligent Scan (SIS)
      • Phase Mode (PM)
      • Friction Force Microscope (FFM)
      • Lateral Modulation FFM (LM‐FFM)
      • ViscoElastic AFM (VE‐AFM) / Force Modulation Microscope
      • Adhesion
      • Current / Pico‐current
      • Scanning Spread Resistance Microscope(SSRM)
      • Kelvin probe Force Microscope (KFM)
      • Electrostatic Force Microscope (EFM)
      • Piezo‐Response Microscope (PRM)
      • Magnetic Force Microscope (MFM)
      • Scanning Non‐linear Dielectric Microscope(SNDM)
      • Atomic Force Microscope (AFM) / Contac Mode
    • Special Contents
    • Image Gallery

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