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Science & Medical SystemsHitachi High-Technologies

Focused Ion and Electron Beam System Ethos NX5000

Focused Ion and Electron Beam System Ethos NX5000

Unsurpassed Performance with Ultimate Flexibility

The Hitachi Ethos FIB-SEM incorporates the latest-generation FE-SEM with superb beam brightness and stability. Ethos delivers high-resolution imaging at low voltages combined with ion optics for nanoscale precision processing.

    Features

    Key Features

    1. High-Performance FE-SEM Column with Dual Lens Mode

    • Ultra-high-resolution observation (HR mode: semi-in-lens)
    • High-accuracy end-point detection in real time (FF mode: Field Free (time sharing mode))

    2. High-Throughput Material Processing

    • Ultra-fast processing with high ion-current density (Max. beam current: 100 nA)
    • User programmable script for auto processing and observation

    3. Microsampling System

    • Fully integrated sample-orientation control for Anti-Curtaining Effect (ACE technology)
    • TEM sample preparation for uniform lamellas at any orientation

    4. Triple-Beam Capable, Delivering Advanced Quality Results

    • Low-acceleration noble-gas ion-beam material processing
    • Innovative functions reduce Ga ion related and other milling artifacts

    5. Large Multi-Port Chamber and Stage for Various Applications

    • Large sample size capable system with exceptional stage stability
    • Full range enhanced long-distance tracking (155 x 155mm)

    Refined Electron Optics and Multi-Signal Detection

    The Ethos SEM column is composed of a magnetic- and electrostatic-field compound objective lens system configured as two lens modes. High Resolution (HR) mode achieves sample observation at ultimate resolution by immersing the sample within the magnetic field of the lens system. Field Free(FF) mode offers real-time FIB processing for high accuracy end point milling. Hyper switching between FIB irradiation and SEM imaging as fast as 10 nsec offers real-time fabrication and observation views with clarity. Fast SEM and IM imaging enables users to quickly find the area of interest with ease.

    High-Resolution SEM Imaging


    Fin-FET 14 nm node device


    3D-NAND device

    High-Performance FIB

    High-current-density FIB for high-speed and large-area processing.
    Auto-pilot software supports a multitude of automated functions for imaging, TEM lamella preparation, cross-section generation, and more...

    Image Description:
    High speed ion milling, SIM image
    highlighting grain contrast of bond wire

    Image Description:
    Multiple sites processed for lift out by
    Auto-pilot Automation software

    Time Sharing Mode

    Time sharing mode is the ultimate tool to maximize SEM observation while ion milling simultaneously.

    Features:
    ■ Time Sharing mode resolves high-quality SEM imaging with any detector and any milling condition for end-point detection in real time.
    ■ Cut & See mode for ultra-high resolution imaging in HR mode.
    ■ Simultaneous observation for traditional imaging

    Cut & See for 3D structural analysis

    FOV: 20 μm
    Number of cut: 200
    Cutting interval: 20 nm
    SEM accelerating voltage: 1.5 kV

    Sample: Fuel cell electrode (Ni-YSZ)
    Sample courtesy of Prof. Naoki Shikazono,
    Institute of Industrial Science,
    The University of Tokyo

    High-Quality TEM Specimen Preparation Using Triple-Beam Technology

    Ethos offers powerful solutions integrated into a single platform including low-acceleration Ar/Xe ion beam processing when configured as a Triple-Beam system.


    Al2O3 single crystal in the <110> plane.

    Dark contrast (red arrow) areas indicates Gallium ion induced damage at 2 kV.

    The right image shows the same single-crystal structure intact after applying 1 kV Argon ion milling revealing clear crystal lattice fringes.

    Triple-Beam System (Argon / Xenon)

    Low-energy Ar/Xe broad ion milling mitigates amorphous material resulting from gallium ion milling.

    ACE: Anti Curtaining Effect

    Optimized GUI for Maximum Efficiency

    Enhanced signal selectivity with 4 detectors

    ■ Four-channel simultaneous signal acquisition of In-Column detectors (SED x 1, BSE x 2) and In-Chamber SE detector
    ■ Programmable menus to save and recall SEM and FIB beam parameters
    ■ Selective and discreet imaging from various detectors enabling specific user applications such as compositional or topographical imaging
    ■ Condition saving and recalling are possible for each signal mode such as gain levels, contrast, and brightness in addition to other parameters

    Next-Generation Interface for Custom Processing Modes and Recipes

    Graphically driven programming for macro visualization

    ■ Simple drag-and-drop interface to create complex processing/observation recipes with ease
    ■ Fully programmable processing modes with nested templates
    ■ Maximum efficiency for routine operation by utilizing registered recipes

    Superior flexibility for creating your recipe

    ■ Multifaceted processing modes including slope and bitmap processing as well as preset patterns including rectangles, circles, and trapezoids
    ■ Predefined recipes for cross-section processing and TEM lamella preparation
    ■ Vector scan software allows custom processing applications
    ■ High-accuracy and automated processing with drift correction
    ■ Recipes can be individual or group-based for multi-user lab environments.

    Sample Chamber and Stage for Various Applications

    ■ Newly designed sample stage for high resolution imaging
    ■ A variety of analytical configurations are possible with optimum detector positioning.

    Specifications

    Specifications
    FIB SIM resolution* 4 nm @ 30 kV, 60 nm @ 2 kV (Edge resolution)
    Accelerating voltage 0.5 kV – 30 kV
    Beam current 100 nA
    Ion source Ga Liquid Metal Ion Source
    SEM SEM resolution* 1.5 nm @ 1 kV, 0.7 nm @ 15 kV
    Accelerating voltage 0.1 kV – 30 kV
    Max. beam current 10 nA
    Electron source Cold cathode field emission
    Detectors In-column secondary electron detector, SE (U)
    In-column backscattered electron detector, BSE (U)
    In-column backscattered electron detector, BSE (L)
    Chamber mounted secondary electron detector, SE (L)
    5-axis motorized stage (with feedback control) X 155 mm
    Y 155 mm
    Z 16.5 mm
    R 0 - 360° endless
    T -10~59°
    Maximum sample size 150 mm in diameter
    Option Ar/Xe ion beam system
    Micro-sampling system
    Gas injection system (2 or 3 reservoirs)
    • Carbon deposition
    • Platinum deposition
    • Tungsten deposition
    Auto loading subchamber
    Auto processing software
    Automatic TEM sample preparation software
    Various sample holders
    EDS (Energy Dispersive X-ray Spectroscopy) system
    EBSD (Electron BackScatter Diffraction) system
    *
    at coincidence point

    NANOMESH

    NANOMESH
    The NANOMESH grid for FIB processing alleviates redeposit effects for high quality lamella preparation.
    Numerous locations for mounting lamellae allows for high precision sample preparation and material features for better analysis.