The "minimization of design" rule for semiconductor device manufacturing is advancing at a remarkable rate. Recent advancements in techniques make it possible to control device structures at an atomic level. To this end, electron microscopy has become an indispensable technique allowing high-resolution imaging with a quick turnaround time. The electron microscope is able to cover a very wide scale range for evaluating everything from the packaged device to the atomic level gate structure. Hitachi High-Tech offers highly advanced in-line and off-line analysis systems for semiconductor device development, manufacturing, failure analysis and quality assurance. We produce a wide range of electron microscope solutions including the world's leading FE-SEM, FIB-SEM, and TEM systems.
In the semiconductor device manufacturing process, electron beam based systems are widely used for developing next generation semiconductor devices, and for QTAT process control for improving manufacturing yield.
Key analysis for FEOL & BEOL
A wide variety of electron beam based systems are used for analyzing the source of a device failure and improving its manufacturing process. QTAT failure analysis is in demand for improving device quality and building a reliable partnership with customers.
Key points of interest for failure analysis:
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