Vortex®-EM Silicon Drift Detector
General Description - Vortex-EM
Vortex-EM silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2.
Vortex-EM detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At 0.1 µs PT with an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate.
- X-ray fluorescence (XRF) spectroscopy both bulk and micro-fluorescence
- Micro-analysis for SEM and TEM
- Synchrotron radiation applications
- Partical Induced X-ray Emission (PIXE)
- Process control
- Fast X-ray mapping
The Vortex-EM is operated at near room temperature and cooled by a thermoelectric cooler (TEC) and can be cycled as frequently as needed without any degradation in detector performance. Cool down times are typically less than 2 minutes.
The Vortex-EM X-ray spectroscopy system include a detector unit and control box which includes power supplies for the detector, TEC and an optional digital pulse processor with PI-SPEC Software.
The complete detector also contains a charge-sensitive preamplifier and temperature stabilization system, which eliminates concerns of varying ambient temperature.
- Extended probe (300 mm)
- Available in 30, 40, 50, 65, 70, 80 mm2
- Available in thickness of 0.5, 1, and 2 mm
- Superb energy resolution
- Detector temperature stabilization
- Additional sizes are available under special contracts
- Small and compact package for minimum vibration
- Digital pulse processor (DPP) with PI-SPEC Software
- Equipped with an ion pump
- RoHS Compliant
- US Patent Numbers: 6,455,858 and 7,129,501 B2
|Detector||Material – Silicon Active Area – 30-80 mm2 – Thickness – 0.5, 1, and 2 mm|
|Window||Material – Thin polymer or Be|
|Energy Resolution (FWHM) @ 5.9 keV||@ 1.0 µs Peaking Time 124e V - 138 eV
@ 0.5 µs Peaking Time 130 eV - 139 eV
@ 0.25 µs Peaking Time 135 eV - 148 eV
@ 0.1 µs Peaking Time 145 eV - 180 eV
|Preamplifier||Type – Charge sensitive, 1.5mV/keV Signal polarity – Positive Reset – Electrical, <1 µs duration Rise time – <100 ns|
|Power Consumption||Nominal voltage – 110/230 V (switchable)
Power supply and detector – 40 W Maximum
|Ion Pump||Requires power, when the system is OFF or in storage, to maintain vacuum.|
|Physical Specifications||Detector package weight – 3,375 g Length – 550 mm (300 mm probe)
Height × Width – 114 mm × 102 mm Cable Standard Length – 3 m
|Digital Pulse Processor (DPP)|
|Digital Controls||Gain – 16-Bit DAC Peaking Time – 0.25 - 16 µs Preset Time – Up to 1717s|
|Data Output||Spectrum Size – 1024, 2048 or 4096 channels Channel Size – 10, 20 or 40 eV|
|Integral Non-linearity||0.1% of full-scale output|
|Deadtime Correction||Better than ± 0.5% accuracy from 0 to 120,000 cps at 4 µs peaking time|
|Software||PI-SPEC software* – Allows user to acquire, manipulate spectra. Pentium
III or later with at least 64 MB memory and 30 MB available disk space.
VTXDLL package* – Dynamic-Link Library to facilitate host software communication with the DPP. Pentium III or later with at least 64 MB memory and 30 MB available disk space.
* Requires a standard USB2.0 port