Batch type ion beam etching machine
Features
- Bucket type ion source of maximum Φ 580mm.
- Both high uniformity and high throughput are possible.
- Control of etching rates is possible high and low.
- Wafer (substrate) self-revolving stage.
- Corresponding to irregular-shaped substrates such as rectangular substrates and mixed irregular substrates, it is also possible to combine substrate sizes.
Main Applications
- Fine processing for printer heads, etc.
Machine evaluation
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We will provide sample processing tailored to the customer's application for free for the first time.
Please make inquires our company regarding wafer size, number of wafer for processing, etc.
Specifications
| Type | IM-580 |
|---|---|
| Ion source size | Φ580 |
| Ion source voltage | 300～1000V |
| Current density | ～1mA/cm2 |
| Object substrate | φ4 " × 10 9 × 5 φinches 8 × 6 " |
| Holder movement | Revolution/Inclination (*) |
| Holder cooling | Water cooling / Gas cooling |
| Wafer replacement | Manual |
