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M-6000 Series is targeted for deep silicon trench etch of power devices used in mobile systems, home electrical appliances, automobiles, trains, etc.
Low temperature etch technology and TM (Time Modulation) bias technology together with the ECR (Electron Cyclotron Resonance) high density plasma source provide for a clean process, superior trench profiles without sidewall residue, and excellent productivity.
|Applicable wafer diameter||150mm, 200mm|
|System configuration||2 etch+ 2 ash (max.)|