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SiC crystals made in electron microscope

© Takeo Kamino, Toshie Yaguchi, Kenichi Ishigami (Hitachi Instrument Engineering Co.,Ltd.)

Mixed powder of graphite and Si is heated up to 1,500degree Celsius and grown into a crystal of SiC through chemical reaction. A photograph shows us an example of the reaction. Here are transmitted images photographed at 1,500degree Celsius (left is before and right is after the reaction). The SiC (006) layer (d = 0.252 nm) is growing up on a graphite (002) layer (d = 0.335 nm).

At 49th photo contest hosted by the Japanese Society of Electron Microscopy in 1993.


  • Specimen: Mixed powder of graphite and Si
  • Instrument: Transmission Electron Microscope H-9000NAR
  • Magnification : × 300,000
  • Accelerating voltage : 300 kV
All information related to these photographers is based on the information when the photo was taken.
This work was presented at the "photo contest" hosted by the Japanese Society of Microscopy.
Reproduction or republication without permission prohibited.
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