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Hitachi

Hitachi High-Technologies GLOBAL

A tunnel current flowing between probe and sample is detected (controlled so that the tunnel current is fixed and sample surface is scanned) by applying a bias voltage between a metallic probe and conductive or semiconductive sample as the distance between them approaches less than several nm. Sample topography as well as its electronic state are observed.

Image of graphite atoms
Scan area: 1.3 nm

  • Electron Microscopes (SEM/TEM/STEM)
  • Atomic Force Microscopes (AFM)
    • Description
      • Dynamic Force Microscope (DFM)
      • Scanning Tunneling Microscope (STM)
      • Sampling Intelligent Scan (SIS)
      • Phase Mode (PM)
      • Friction Force Microscope (FFM)
      • Lateral Modulation FFM (LM‐FFM)
      • ViscoElastic AFM (VE‐AFM) / Force Modulation Microscope
      • Adhesion
      • Current / Pico‐current
      • Scanning Spread Resistance Microscope(SSRM)
      • Kelvin probe Force Microscope (KFM)
      • Electrostatic Force Microscope (EFM)
      • Piezo‐Response Microscope (PRM)
      • Magnetic Force Microscope (MFM)
      • Scanning Non‐linear Dielectric Microscope(SNDM)
      • Atomic Force Microscope (AFM) / Contac Mode
    • Special Contents
    • Image Gallery

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