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Focused Ion & Electron Beam System nanoDUE'T NB5000

Focused Ion & Electron Beam System nanoDUE'T NB5000

The dual-beam FIB-SEM integrates a high-performance 40 kV FIB column and an ultra-high-resolution Schottky field-emission SEM column. By using dedicated fabrication template patterns for automatic lift-out, fabrication processes from fiducial marking to specimen lift-out can be automated. For lamella thinning, the fabrication process from rough milling to fine-finish milling can be automatically executed. The Mill and Monitor function allows for observation and capture of sliced images for 3D image reconstruction and for internal structural analysis. A variety of holders are available including those that are application specific, and their compatibility with Hitachi TEM/SEM products realizes high throughput and ease of use.

    Features

    Ultra-high performance FIB

    The low CsFIB optics*2 deliver 50 nA or more of beam current (@40 kV) in an about 1 µm spot size. The high current enables unconventional large-area milling, hard material fabrication and high-throughput multiple-specimen preparation.

    New Micro-sampling

    Hitachi's patented Micro-sampling technology provides smooth probe motion. Also, the probe can be used for newly developed absorbed current imaging*1 to aid fault isolation.

    High-precision end-point detection

    High-resolution SEM allows high-precision end-point detection. Section-view function, which displays an outline of the cross-section utilizing the real-time FIB image, is ideal for preparing electron-irradiation-sensitive specimens such as low-K material.

    High-resolution SEM

    Hitachi's unparalleled SEM column and detector design*2 enables high-resolution SEM imaging during and after FIB fabrication.

    Holder compatibility with TEM/STEM*1*2

    A side-entry STEM/TEM-type staqe*1 allows the use of the same specimen holder (compatible with NB5000 and Hitachi TEM/STEM). No tweezer handling of specimen during transfer results in higher-throughput TEM/STEM analyses.

    *1:
    Optional accessory
    *2:
    Hitachi patent: Low Cs FIB optics: patent pending, Micro-sampling: JP2774884/US5270552, Section-view function: patent pending, SEM column and detector design: JP3081393/US5387793, Holder compatibility: JP2842083

    Specifications

    FIBAccelerating voltage 1 - 40 kV
    Beam current 50 nA or more @40 kV (CP)
    SIM resolution 5 nm @40 kV (CP)
    Magnification ×60 - ×250,000
    Ion source Ga Liquid Metal Ion Source
    Lens system Low Cs 2-stage electrostatic lens system
    SEMAccelerating voltage 0.5 - 30 kV
    SEM resolution 1.0 nm @15 kV(CP)
    MagnificationHigh Mag mode ×250 - ×800,000
    Low Mag mode ×70 - ×2,000
    Electron source ZrO/W Schottky emission
    Lens system 3-stage electromagnetic lens reduction system
    Signal selectionSEM Upper SE, Lower SE, Absorbed current*1
    FIB Lower SE, Absorbed current*1
    Eucentric stageTraverse range X: 50 mm (30 mm*2),
    Y: 50 mm (30 mm(*2)), Z: 22 mm
    T: -1.5 - 58.3°, R: 360°
    Sample sizeMaximum diameter Φ50 mm (Φ30 mm*2)
    DepositionMaterial Tungsten/Carbon (changeable)
    Micro-samplingProbe exchange Load lock type
    Additional function Touch sensing, Absorbed current imaging*1

    CP:Beam Cross Point

    *1
    :Optional accessory
    *2
    :When side entry stage is ordered

    Application Data

    Electronics

    Ultrafast milling

    Specimen: Si device
    FIB accelerating voltage: 40 kV
    Ion beam current: 70 nA
    Pattern size: 30 × 30 um

     

    High resolution 30 kV STEM imaging

    BF-STEM
    BF-STEM

    ADF-STEM
    ADF-STEM

    Specimen: NAND flash memory
    STEM accelerating voltage: 30 kV

     

    High-precision site-specific lamella preparation

    3X NAND flash memory
    Specimen: 3X NAND flash memory
    Observation: HD-2700 Aberration -corrected STEM (Accelerating voltage: 200 kV)

     

    3D elemental distribution analysis (3D EDS)

    Solder bump
    Specimen: Solder bump
    Cutting interval: 100 nm
    Number of cut: 222
    SEM accelerating voltage: 10 kV

     

    Material Science

    Uniformly thick (±5%) lamella preparation using flip holder

    Si3N4
    Specimen:Si3N4
    Observation/analysis: HD-2700+Gatan Enfinium®

     

    High resolution orientation analysis (TKD analysis)

    Copper wire
    Specimen: Copper wire
    (a) Band contrast map
    (b) Band contrast map (enlarged view)
    (c) IPF map (Z-direction)
    (d) IPF map (Y-direction)
    SEM accelerating voltage: 30 kV
    Remarks: High resolution orientation analysis (TKD analysis)

     

    Life science

    Cryo serial FIB sectioning and 3D elemental distribution analysis

    BSE image (accelerating voltage : 3 kV)
    BSE image (accelerating voltage : 3 kV)

    BSE image (accelerating voltage : 3 kV)
    BSE image (accelerating voltage : 3 kV)

    3D reconstruction

    Specimen: emulsion (frozen)

    Topics

    Article information on Hitachi technical magazine "SI NEWS"

    Article information on Hitachi technical magazine "SI NEWS"
    This journal addresses a wide range variety of research papers and useful application data using Hitachi science instruments. Those authors are notable researchers and Hitachi application engineers. This is an Focused Ion & Electron Beam System nanoDUE'T NB5000

    Applications

    Hitachi FIB Application Data

    Technical magazine
    "SI NEWS"

    This journal addresses a wide range variety of research papers and useful application data using Hitachi science instruments.