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Real-time 3D analytical FIB-SEM NX9000

Real-time 3D analytical FIB-SEM NX9000

FIB-SEM System for True 3D Structural Analysis

The newly developed FIB-SEM system from Hitachi, the NX9000 incorporates an optimized layout for true high-resolution serial sectioning to tackle the latest demands in 3D structural analysis and for TEM and 3DAP analyses. The NX9000 FIB-SEM system allows the highest precision in material processing for a wide range of areas relating to advanced materials, electronic devices, biological tissues, and a multitude of other applications.

    Features

    • The SEM column and FIB column are orthogonally arranged to optimize the column positioning for 3D structural analysis.
    • The combination of high-brightness cold-field-emission electron source and high-sensitivity optics support analysis of a wide range of materials from biological tissues to magnetic materials.
    • The Micro-sampling system and Triple Beam system allow high-quality sample preparation for TEM and atom-probe applications.

    Ion milling and observation at normal incidence in real-time for true analytical imaging

    The SEM column and FIB column are orthogonally arranged to realize normal incident SEM imaging of FIB cross sections.
    Orthogonal column arrangement eliminates aspect deformation, foreshortening of cross-sectional images, and shift of the field of view (FOV) during serial section imaging, which cannot be avoided by conventional FIB-SEM systems. The NX9000 images enable highly accurate 3D structural analysis. Optical correlative microscopy can be applied easily due to the benefit of surface-planar EM imaging.

    Conventional FIB-SEM , Orthogonally arranged FIB-SEM

    Sample: Mouse brain neuron
    Sample courtesy of Yoshiyuki Kubota, Ph.D., Neural Information Processing Systems (NIPS)

    Cut & See·3D-EDS*1·3D-EBSD*1 available for a wide variety of materials

    Cut&See

    Cut & See supports high-resolution, high-contrast imaging of biological tissues, semiconductors, and magnetic materials, such as steel and nickel, at low accelerating voltages.
    Serial section images can be collected with high throughput due to the proper geometry of the ion and electron column.

    1nm step Cut&See , Serial section images

    Sample: NAND flash memory
    SEM accelerating voltage: 1 kV
    Cutting interval: 1 nm
    Number of cut: 300

    3D-EDS*1

    Serial section SEM images and serial section elemental maps can be collected using 3D-EDS.
    The large-area silicon drift detector reduces the acquisition time and enables elemental mapping at low accelerating voltages.

    3D-EDS

    Sample: Fuel cell electrode
    SEM accelerating voltage: 5 kV
    Cutting interval: 100 nm
    Number of cut: 212

    Sample courtesy of Prof. Naoki Shikazono, University of Tokyo

    3D-EBSD*1

    Simultaneous SEM, FIB, and EBSD signals are obtained for 3D-EBSD without moving the stage during FIB sectioning and EBSD analysis. Accuracy and throughput of 3D crystal orientation analysis and segmentation yield high quality and less post-processing correction.

    3D-EBSD

    Sample: Ni
    SEM accelerating voltage: 20 kV
    Cutting interval: 150 nm
    Number of cut: 150

    *1:
    Option

    Hitachi patents:
    US6118122, US6538254, US6828566, US7138628, US7345289, US7397050, US7397051, US7442942, US7525108, US7550750, US8198603, US8569719, US8642958, US8664598, and other patents, as of Jun., 2015

    Specifications

    Specifications
    ItemsDescription
    SEM Electron source Cold cathode field emission source
    Accelerating voltage 0.1 - 30 kV
    Resolution 2.1 nm@1 kV
    1.6 nm@15 kV
    FIB Ion source Ga liquid metal ion source
    Accelerating voltage 0.5 - 30 kV
    Resolution 4.0 nm@30 kV
    Maximum probe current 100 nA
    Standard detector In-column SED / In-column BSED / Chamber SED
    Stage X 0 - 20 mm *2
    Y 0 - 20 mm *2
    Z 0 - 20 mm *2
    θ 0 - 360° *2
    τ -25 - 45° *2
    Maximum sample size 6 mm x 6 mm, 2 mm thick
    *2:
    Stroke is limited by each sample holder

    NANOMESH

    NANOMESH
    The NANOMESH grid for FIB processing alleviates redeposit effects for high quality lamella preparation.
    Numerous locations for mounting lamellae allows for high precision sample preparation and material features for better analysis.

    Application Data

    Material Science

    3D distribution analysis with multiple signals

    Fuel cell electrode

    Specimen: Fuel cell electrode SEM accelerating voltage: 0.3 kV
    FOV: 20 µm
    Cutting interval: 10 nm
    Number of cut: 600

     

    Semiconductor

    3D structural analysis from serial section SEM images

    Specimen: 3D NAND flash memory

     

    High-precision site-specific lamella preparation

    30 kV FIB

    1 kV Ar

    Specimen: 14 nm SoC device
    Final milling: 1 kV Ar
    Observation: HF-3300 Cold FE-TEM (Accelerating voltage: 300 kV)

     

    Life science

    3D reconstruction from serial section SEM images

    Specimen: Mouse brain neuron

    Topics

    Article information on Hitachi technical magazine "SI NEWS"

    Article information on Hitachi technical magazine "SI NEWS"
    This journal addresses a wide range variety of research papers and useful application data using Hitachi science instruments. Those authors are notable researchers and Hitachi application engineers. This is an Real-time 3D analytical FIB-SEM NX9000

    Applications

    Hitachi FIB Application Data

    Technical magazine
    "SI NEWS"

    This journal addresses a wide range variety of research papers and useful application data using Hitachi science instruments.