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Vortex®-EZ Silicon Drift Detector

Vortex®-EZ Silicon Drift Detector

Why Our Products Are Better

  • Large Active Area
  • High Throughput
  • Reliability

General Description

General Description - Vortex-EZ

Vortex-EZ silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex-EZ detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<140 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate.

Typical Applications

  • X-ray fluorescence (XRF) spectroscopy both bulk and micro-fluorescence
  • X-ray diffraction (XRD) and fluorescence (XRF)
  • Partical Induced X-ray Emission (PIXE)
  • Synchrotron radiation applications
  • Process control

The Vortex-EZ is operated at near room temperature and cooled by a thermoelectric cooler (TEC) and can be cycled as frequently as needed without any degradation in detector performance. Cool down times are typically less than 2 minutes.

The Vortex-EZ X-ray spectroscopy system include a detector unit and control box which includes power supplies for the detector, TEC and an optional digital pulse processor with PI-SPEC Software.

The complete detector also contains a charge-sensitive preamplifier and temperature stabilization system, which eliminates concerns of varying ambient temperature.

Features

  • Extended probe (60 mm)
  • Available in 30, 40, 50, 65, 70, 80 mm2
  • Available in thickness of 0.5 and 1 mm
  • Superb energy resolution
  • Detector temperature stabilization
  • Additional sizes are available under special contracts
  • Small and compact package for minimum vibration
  • Digital pulse processor (DPP) with PI-SPEC Software
  • RoHS Compliant

Specifications

Name Silicon Drift X-Ray Detector Spectrometer
Type Vortex-EZ
Overview Vortex-EZ silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex-EZ detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<140 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate. The Vortex-EZ is operated at near room temperature and cooled by a thermoelectric cooler (TEC) and can be cycled as frequently as needed without any degradation in detector performance. Cool down times are typically less than 2 minutes. The Vortex-EZ X-ray spectroscopy systems include a detector unit and control box which includes power supplies for the detector, TEC and an optional digital pulse processor with PI-SPEC Software. The complete detector also contains a charge-sensitive preamplifier and temperature stabilization system, which eliminates concerns of varying ambient temperature.
Typical Applications
  • X-ray fluorescence (XRF) spectroscopy – both bulk and micro-fluorescence
  • X-ray diffraction (XRD) and fluorescence (XRF)
  • Partical Induced X-ray Emission (PIXE)
  • Synchrotron radiation applications
  • Process control
Features
  • 60 mm Probe
  • Available in 30, 40, 50, 65, 70, 80 mm2
  • Available in thickness of 0.5 and 1 mm
  • Superb energy resolution
  • Detector temperature stabilization
  • Additional sizes are available under special contracts
  • Small and compact package for minimum vibration
  • Digital pulse processor (DPP) with PI-SPEC Software
US Patent Number
  • 6,455,858
  • 7,129,501 B2

Specifications

Detector Material – Silicon Active Area – 30-80 mm2 – Thickness – 0.5 mm and 1 mm
Window Material – Beryllium Thickness – 12.5 and 25 µm (alternatives available)
Energy Resolution (FWHM) @ 5.9 keV @ 1.0 µs Peaking Time 135 eV - 150 eV
@ 0.5 µs Peaking Time 145 eV - 160 eV
@ 0.25 µs Peaking Time 155 eV - 170 eV
@ 0.1 µs Peaking Time 165 eV - 180 eV
Preamplifier Type – Charge sensitive, 1.5 mV/keV Signal polarity – Positive Reset – Electrical, <1 µs duration Rise time – <100 ns
Cooling Thermoelectric
Power Consumption Nominal voltage – 110/230 V (switchable)
Power supply and detector – 40 W Maximum
Physical Specifications Detector package weight – 900 g Length – 227 mm (60 mm probe)
Height × Width – 62 mm × 62 mm Cable Standard Length – 3 m
Digital Pulse Processor (DPP)
Digital Controls Gain – 16-Bit DAC Peaking Time – 0.25 - 16 µs Preset Time – Up to 1717s
Data Output Spectrum Size – 1024, 2048 or 4096 channels Channel Size – 10, 20 or 40 eV
Integral Non-linearity 0.1% of full-scale output
Deadtime Correction Better than ± 0.5% accuracy from 0 to 120,000 cps at 4 µs peaking time
Software PI-SPEC software* – Allows user to acquire, manipulate spectra. Pentium III or later with at least 64 MB memory and 30 MB available disk space.
VTXDLL package
* – Dynamic-Link Library to facilitate host software communication with the DPP. Pentium III or later with at least 64 MB memory and 30 MB available disk space.

* Requires a standard USB2.0 port

Vortex CUBE Count Rate; XIA Mercury DPP
Vtx QE

Dimensional Drawing

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