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Local resistance distribution on the sample surface at the wide range amplifier greater than 6th order is observed by using a hard cantilever of high conductivity and measuring the micro-current at the contact position with the probe by applying a bias voltage to the sample. The practical semiconductor dopant concentration range is sufficiently covered.
Schematic Animation of SSRM Observation
The electric resistance distribution of highly conductive Al foil and various cathode materials (micro‐cathode active materials, a conductive assistant, and resin binders) on both sides are clearly observed in the SSRM image.