SiC crystals made in electron microscope
Mixed powder of graphite and Si is heated up to 1,500degree Celsius and grown into a crystal of SiC through chemical reaction. A photograph shows us an example of the reaction. Here are transmitted images photographed at 1,500degree Celsius (left is before and right is after the reaction). The SiC (006) layer (d = 0.252 nm) is growing up on a graphite (002) layer (d = 0.335 nm).
At 49th photo contest hosted by the Japanese Society of Electron Microscopy in 1993.
Condition
Specimen: Mixed powder of graphite and Si
Instrument: Transmission Electron Microscope H-9000NAR
Magnification : × 300,000
Accelerating voltage : 300 kV
*All information related to these photographers is based on the information when the photo was taken.
*This work was presented at the "photo contest" hosted by the Japanese Society
of Microscopy.
*Reproduction or republication without permission prohibited.
*"nanoart" is registered trademark of Hitachi High-Tech Corporation in Japan.
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