Skip to main content
November 19, 2009
nanoEBAC NE4000, enabling to identify device failure locations effectively
On December 1, 2009, Hitachi High-Technologies Corporation (TSE:8036) will introduce the nanoEBAC NE4000 device characterization system for analysis of interconnect failure locations in semiconductor devices by Electron Beam Absorbed Current (EBAC) (*) technique.
The ability to characterize and locate interconnect and via opens, shorts and high resistivity problems becomes more challenging as device structures shrink to 32nm and below, while the number of metallization layers increase vertically. Conventional probing techniques for identifying and locating failures have become increasingly more difficult and time consuming for today's nanometer size structures, such as an MOS transistor.
In 2004, Hitachi High-Technologies started to deliver the device characteristic evaluation system NanoProber N-6000 that enabled measurement of the electrical characteristics of single transistors with the precisely controlled probing system that has contributed to increased efficiency in failure analysis of semiconductor devices.
The newly developed nanoEBAC NE4000 succeeds the well reputed probing technique applied on the N-6000 Nanoprober. The NE4000 detects EBAC by direct probing to LSI interconnects or pads that is synchronized with the electron beam scan and visualizes specific location of under layer wirings without any damage. The electron beam enables identification of the failure locations more precisely than the conventional probing method.
Also, Hitachi patented high performance EBAC amplifiers (electric current amplifier and differential amplifiers) enhance identification performance of failure locations such as pattern disconnections as well as high resistivity interconnect defects. Moreover, higher rate EBAC imaging is realized with the newly developed Variable-frequency band function. It is expected that the product application will expand to new electronic components and materials for size reduction in addition to the test patterns such as interconnect and via-chain of real devices.
Hitachi High-Technologies expects sales of 20 units annually and will start deliveries beginning May 2010.
Fine-structured device characteristics evaluation system nanoEBAC NE4000
For further information, please contact as follows;
Analytical Systems Marketing Dept.2
Analytical Science Business Group
Public & Investor Relations Group, Secretary's Office